Power MOSFET
Preliminary Technical Information
TrenchTM HiperFETTM Power MOSFETs
IXFT94N30T IXFH94N30T
VDSS = 300V
ID25 = 94A ≤ RD...
Description
Preliminary Technical Information
TrenchTM HiperFETTM Power MOSFETs
IXFT94N30T IXFH94N30T
VDSS = 300V
ID25 = 94A ≤ RDS(on) 36mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD
dv/dt
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
300
V
300
V
±20
V
±30
V
94
A
235
A
47
A
500
mJ
890
W
20
V/ns
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4
g
6
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values Min. Typ. Max.
300
V
3.0
5.0 V
±200 nA
50 μA 2 mA
36 mΩ
TO-268 (IXFT)
G S D (Tab)
TO-247 (IXFH)
G D S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on)
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z DC Cho...
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