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IXFH320N10T2
N-Channel MOSFET
Description
isc N-Channel MOSFET
Transistor
IXFH320N10T2 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.5mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·A...
INCHANGE
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