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IXFK360N10T

Power MOSFET

Description

Preliminary Technical Information GigaMOSTM Trench HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK360N10T IXFX360N10T VDSS = ID25 = RDS(on) ≤ trr ≤ 100V 360A 2.9mΩ 130ns TO-264 (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C ...

IXYS

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