Power MOSFET
Preliminary Technical Information
GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated F...
Description
Preliminary Technical Information
GigaMOSTM Trench HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK360N10T IXFX360N10T
VDSS =
ID25 =
RDS(on) ≤
trr
≤
100V 360A 2.9mΩ 130ns
TO-264 (IXFK)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IL(RMS) IDM
IA EAS
PD
dv/dt
TJ TJM Tstg
TL TSOLD
Md FC
Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247
Maximum Ratings
100
V
100
V
± 20
V
± 30
V
360
A
160
A
900
A
100
A
3
J
1250
W
20
V/ns
-55 ... +175
°C
175
°C
-55 ... +175
°C
300
°C
260
°C
1.13/10 20..120 /4.5..27
Nm/lb.in. N/lb.
10
g
6
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
Characteristic Values Min. Typ. Max.
100
V
VGS(th)
VDS = VGS, ID = 3mA
2.5
4.5 V
IGSS
VGS = ± 20V, VDS = 0V
± 200 nA
IDSS
VDS = VDSS, VGS = 0V
TJ = 150°C
25 μA 2.5 mA
RDS(on)
VGS = 10V, ID = 100A, Notes 1 & 2
2.9 mΩ
G
D
Tab
S
PLUS247 (IXFX)
G D S
G = Gate S = Source
Tab
D = Drain Tab = Drain
Features
z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Low RDS(on)
Advantages
z Easy to Mount z Sp...
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