Document
Advance Technical Information
TrenchTM HiperFETTM Power MOSFETs
IXFT150N20T IXFH150N20T
VDSS = 200V
ID25 = 150A ≤ RDS(on) 15mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD
dv/dt
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
200
V
200
V
±20
V
±30
V
150
A
375
A
75
A
1.5
J
890
W
20
V/ns
-55 to +150
°C
+150
°C
-55 to +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4
g
6
g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 1mA
VGS(th)
VDS = VGS, ID = 4mA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
200
V
3.0
5.0 V
±200 nA
25 μA 1.5 mA
15 mΩ
TO-268 (IXFT)
G S D (Tab)
TO-247 (IXFH)
G D S
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
z International Standard Packages z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on)
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching
Applications
© 2011 IXYS CORPORATION, All Rights Reserved
DS100426(12/11)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
TO-247
Characteristic Values Min. Typ. Max.
66
112
S
11.7
nF
1250
pF
162
pF
43
ns
12
ns
45
ns
12
ns
177
nC
70
nC
44
nC
0.14 °C/W
0.21
°C/W
IXFT150N20T IXFH150N20T
TO-268 Outline
Terminals: 1 - Gate
2,4 - Drain
3 - Source
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = 100A, VGS = 0V, Note 1
trr IRM QRM
IF = 75A, -di/dt = 100A/μs, VR = 75V, VGS = 0V
Characteristic Values Min. Typ. Max.
150 A
600 A
1.4 V
100
ns
8.0
A
0.4
μC
TO-247 Outline
123
∅P
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
e
Terminals: 1 - Gate 3 - Source
2 - Drain
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Dim. Millimeter Min. Max.
A
4.7 5.3
A1
2.2 2.54
A2
2.2 2.6
b
1.0 1.4
b1 1.65 2.13 b2 2.87 3.12
C
.4
.8
D 20.80 21.46
E 15.75 16.26
e 5.20 5.72
L 19.81 20.32
L1
4.50
∅P 3.55 3.65 Q 5.89 6.40
R 4.32 5.49 S 6.15 BSC
Inches Min. Max.
.185 .209 .087 .102 .059 .098
.040 .055 .065 .084 .113 .123
.016 .031 .819 .845 .610 .640
0.205 0.225 .780 .800 .177
.140 .144 0.232 0.252
.170 .216 242 BSC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123 B1 6,306,728 B1
6,404,065 B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
ID - Amperes
IXFT150N20T IXFH150N20T
Fig. 1. Output Characteristics @ TJ = 25ºC
150 VGS = 10V 8V
7V
100
50
6V
5V 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125ºC
150 VGS = 10V 8V 7V
100
6V
50
5V
4V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 75A Value vs.
Drain Current
3.0
VGS = 10V 2.6
TJ = 125ºC
2.2
1.8
TJ = 25ºC 1.4
1.0
0.6 0
40
80
120
160
200
240
280
320
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
350
VGS = 10V
300
8V
250
200
7V 150
100
50
0 0
6V
5V
5
10
15
20
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature
2.8
VGS = 10V 2.4
2.0
I D = 150A
1.6
I D = 75A
1.2
0.8
0.4
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
160
140
120
100
80
.