DatasheetsPDF.com

IXFH150N20T Dataheets PDF



Part Number IXFH150N20T
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXFH150N20T DatasheetIXFH150N20T Datasheet (PDF)

Advance Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT150N20T IXFH150N20T VDSS = 200V ID25 = 150A ≤ RDS(on) 15mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1.6mm (0.063in) fro.

  IXFH150N20T   IXFH150N20T


Document
Advance Technical Information TrenchTM HiperFETTM Power MOSFETs IXFT150N20T IXFH150N20T VDSS = 200V ID25 = 150A ≤ RDS(on) 15mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 200 V 200 V ±20 V ±30 V 150 A 375 A 75 A 1.5 J 890 W 20 V/ns -55 to +150 °C +150 °C -55 to +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 4 g 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 200 V 3.0 5.0 V ±200 nA 25 μA 1.5 mA 15 mΩ TO-268 (IXFT) G S D (Tab) TO-247 (IXFH) G D S D (Tab) G = Gate D = Drain S = Source Tab = Drain Features z International Standard Packages z Avalanche Rated z High Current Handling Capability z Fast Intrinsic Rectifier z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC Motor Drives z Uninterruptible Power Supplies z High Speed Power Switching Applications © 2011 IXYS CORPORATION, All Rights Reserved DS100426(12/11) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 2Ω (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-247 Characteristic Values Min. Typ. Max. 66 112 S 11.7 nF 1250 pF 162 pF 43 ns 12 ns 45 ns 12 ns 177 nC 70 nC 44 nC 0.14 °C/W 0.21 °C/W IXFT150N20T IXFH150N20T TO-268 Outline Terminals: 1 - Gate 2,4 - Drain 3 - Source Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, Pulse Width Limited by TJM VSD IF = 100A, VGS = 0V, Note 1 trr IRM QRM IF = 75A, -di/dt = 100A/μs, VR = 75V, VGS = 0V Characteristic Values Min. Typ. Max. 150 A 600 A 1.4 V 100 ns 8.0 A 0.4 μC TO-247 Outline 123 ∅P Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. e Terminals: 1 - Gate 3 - Source 2 - Drain ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,850,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 ID - Amperes IXFT150N20T IXFH150N20T Fig. 1. Output Characteristics @ TJ = 25ºC 150 VGS = 10V 8V 7V 100 50 6V 5V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125ºC 150 VGS = 10V 8V 7V 100 6V 50 5V 4V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 75A Value vs. Drain Current 3.0 VGS = 10V 2.6 TJ = 125ºC 2.2 1.8 TJ = 25ºC 1.4 1.0 0.6 0 40 80 120 160 200 240 280 320 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes Fig. 2. Extended Output Characteristics @ TJ = 25ºC 350 VGS = 10V 300 8V 250 200 7V 150 100 50 0 0 6V 5V 5 10 15 20 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 75A Value vs. Junction Temperature 2.8 VGS = 10V 2.4 2.0 I D = 150A 1.6 I D = 75A 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 160 140 120 100 80 .


IXFT150N20T IXFH150N20T IXFP130N15X3


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)