IXFP8N85XM

isc N-Channel MOSFET Transistor IXFP8N85XM ·FEATURES ·High power dissipation ·Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 850 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 16 PD Total Dissipation @TC=25℃ 33 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 3.78 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXFP8N85XM ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 850 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 250μA 3 5.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 4A 850 mΩ IGSS Gate-Source Leakage Current VGS= ±30V;VDS=0V ±100 nA VDS= VDSS; VGS= 0V IDSS Drain-Source Leakage Current VDS= VDSS; VGS= 0V;TJ= 125℃ 10 μA 750 VSD Diode forward voltage IF= 8A; VGS = 0V 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the datash...