isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤ 100mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density
·ABSOLUTE MAXIMUM RATINGS...