IXFP30N60X

isc N-Channel MOSFET Transistor IXFP30N60X ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 15 5mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 60 PD Total Dissipation @TC=25℃ 500 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.25 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 1mA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 4mA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 15A IGSS Gate-Source Leakage Current VGS= ±30V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃ IF= 30A; VGS = 0V IXFP30N60X MIN MAX UNIT 600 V 2.5 4.5 V 155 mΩ ±100 nA 25 μA 750 1.4 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any ...