IXFP130N10T

isc N-Channel MOSFET Transistor IXFP130N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.1mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 130 IDM Drain Current-Single Pulsed 350 PD Total Dissipation @TC=25℃ 360 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.42 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXFP130N10T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA 100 V VGS(th) Gate Threshold Voltage VDS= VGS; ID = 1mA 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 25A 9.1 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±200 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 25A; VGS = 0V 10 μA 500 1.0 V NOTICE： ISC reserves the rights to make changes of the content herein the datas...