isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static drain-source on-resistance:
...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static drain-source on-resistance:
RDS(on) ≤ 450mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Switched mode power supplies ·DC-DC converters
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
8
A
IDM
Drain Current-Single Pulsed
16
A
PD
Total Dissipation @TC=25℃
150
W
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX
UNIT
0.83
℃/W
IXFY8N65X2
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID = 250μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 4A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃
IF= 8A; VGS = 0V
IXFY8N65X2
MIN MAX UNIT
650
V
3
5
V
450
mΩ
±100 nA
10 μA
500
1.4
V
NOTICE： ISC reserves the rights to make change...
