IXKC15N60C5

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 165mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 15 IDM Drain Current-Single Pulsed 11 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.1 UNIT ℃/W IXKC15N60C5 isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXKC15N60C5 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBO L PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA MIN TYP MAX UNIT 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 100μA 2.5 3.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 12A 165 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±100 nA VDS= VDSS; VGS= 0V IDSS Drain-Source Leakage Current VDS= VDSS; VGS= 0V;TJ= 125℃ 1 μA 10 VSD Diode forward voltage IF= 12A; VGS = 0V 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only ...