isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.165Ω@VGS=10V ·Fully character...
isc N-Channel MOSFET
Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤ 0.165Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
24
A
Tj
Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 0.5
UNIT ℃/W
IXKH24N60C5
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isc N-Channel MOSFET
Transistor
IXKH24N60C5
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA
600
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID = 1.1mA
2.5
3.5
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 12A
165
mΩ
IGSS
Gate-Source Leakage Current
VGS= ±20V;VDS=0V
±100
nA
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃
IF= 12A; VGS = 0V
1 μA
10
1.2
V
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