IXKH47N60C

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 70mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 47 A Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.3 UNIT ℃/W IXKH47N60C isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS= 0V; ID = 250μA VGS(th) Gate Threshold Voltage VDS= VGS; ID = 2mA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 30A IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V IF= 40A; VGS = 0V IXKH47N60C MIN MAX UNIT 600 V 2 4 V 70 mΩ ±100 nA 25 μA V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applicat...