IXTA1R4N100P

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.4 IDM Drain Current-Single Pulsed 3.0 PD Total Dissipation @TC=25℃ 63 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.98 UNIT ℃/W IXTA1R4N100P isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTA1R4N100P ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 1000 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 50μA 2.5 4.5 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 0.7A 11.8 Ω IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±50 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 125℃ IF=1.4A; VGS = 0V 5 μA 150 1.5 V NOTICE： ISC reserves the rights to make changes of the content herein ...