IXKC23N60C5

IXKC 23N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge Preliminary data D G S ID25 = 23 A VDSS = 600 V R = DS(on) max 0.1 Ω ISOPLUS220TM G D S E72873  isolated back surface MOSFET Symbol VDSS VGS ID25 ID90 EAS EAR dV/dt Conditions TVJ = 25°C TC = 25°C TC = 90°C single pulse repetitive ID = 11 A; TC = 25°C MOSFET dV/dt ruggedness VDS = 0...480 V Maximum Ratings 600 V ± 20 V 23 A 16 A 800 mJ 1.2 mJ 50 V/ns Symbol RDSon VGS(th) IDSS IGSS Ciss Coss Qg Qgs Qgd td(on) tr td(off) tf RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = 18 A VDS = VGS; ID = 1.2 mA VDS = 600 V; VGS = 0 V VGS = ± 20 V; VDS = 0 V VGS = 0 V; VDS = 100 V f = 1 MHz TVJ = 25°C TVJ = 125°C VGS = 0 to 10 V; VDS = 400 V; ID = 18 A VGS = 10 V; VDS = 400 V ID = 18 A; RG = 3.3 Ω 90 2.5 3 50 2800 130 60 14 20 10 5 60 5 100 mW 3.5 V 5 µA µA 100 nA pF pF 80 nC nC nC ns ns ns ns 0.85 K/W Features Silicon chip on Direct-Copper-Bond substrate - high power dissipation - isolated mounting surface - 2500 V electrical isolation - low drain to tab capacitance (< 30 pF) Fast CoolMOS™ 1) power MOSFET 4th generation - high blocking capability - lowest resistance - avalanche rated for unclamped inductive switching (UIS) - low thermal resistance due to reduced chip thickness Enhanced total power den...