Power MOSFET. IXKC19N60C5 Datasheet

IXKC19N60C5 MOSFET. Datasheet pdf. Equivalent


Part IXKC19N60C5
Description Power MOSFET
Feature Advanced Technical Information IXKC 19N60C5 CoolMOS™ 1) Power MOSFET Electrically isolated back s.
Manufacture IXYS
Datasheet
Download IXKC19N60C5 Datasheet


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IXKC19N60C5
Advanced Technical Information
IXKC 19N60C5
CoolMOS™ 1) Power MOSFET
Electrically isolated back surface
2500 V electrical isolation
N-Channel Enhancement Mode
Low RDSon, high VDSS MOSFET
Ultra low gate charge
D
G
S
ID25
= 19 A
VDSS
= 600 V
RDS(on) max = 0.125 Ω
ISOPLUS220TM
G
D
S
E72873
q
isolated back
surface
MOSFET
Symbol
VDSS
VGS
ID25
ID90
EAS
EAR
dV/dt
Conditions
TVJ = 25°C
TC = 25°C
TC = 90°C
single pulse
repetitive
ID = 11 A; TC = 25°C
MOSFET dV/dt ruggedness VDS = 0...480 V
Maximum Ratings
600 V
± 20
V
19 A
15 A
708 mJ
1.2 mJ
50 V/ns
Symbol
RDSon
VGS(th)
IDSS
IGSS
Ciss
Coss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
RthJC
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 10 V; ID = 16 A
VDS = VGS; ID = 1.1 mA
VDS = 600 V; VGS = 0 V
VGS = ± 20 V; VDS = 0 V
VGS = 0 V; VDS = 100 V
f = 1 MHz
TVJ = 25°C
TVJ = 125°C
VGS = 0 to 10 V; VDS = 400 V; ID = 12 A
VGS = 10 V; VDS = 400 V
ID = 16 A; RG = 3.3 Ω
110
2.5
3
20
2500
120
53
12
18
15
5
50
5
125 mΩ
3.5
V
2 µA
µA
100 nA
pF
pF
70 nC
nC
nC
ns
ns
ns
ns
0.95 K/W
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 30 pF)
• Fast CoolMOS™ 1) power MOSFET 4th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
• Welding
• Inductive heating
• PDP and LCD adapter
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1) CoolMOSis a trademark of
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209b
1-4



IXKC19N60C5
Advanced Technical Information
Source-Drain Diode
Symbol Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
VSD
IF = 16 A; VGS = 0 V
trr
QRM
IF = 16 A; -diF /dt = 100 A/µs; VR = 400 V
IRM
16
A
0.9 1.2
V
430
ns
9
µC
42
A
Component
Symbol Conditions
TVJ
Tstg
VISOL
FC
operating
storage
RMS leads-to-tab, 50/60 Hz, f = 1 minute
mounting force
Maximum Ratings
-55...+150 °C
-55...+150 °C
2500 V~
11-65 / 2.4-11 N/lb
Symbol Conditions
Characteristic Values
min. typ. max.
RthCH
Weight
with heatsink compound
0.3
K/W
2.7
g
IXKC 19N60C5
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209b
2-4







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