N-Channel MOSFET. IXTA4N60P Datasheet

IXTA4N60P MOSFET. Datasheet pdf. Equivalent


Part IXTA4N60P
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 2.0Ω@VGS=10.
Manufacture INCHANGE
Datasheet
Download IXTA4N60P Datasheet


PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Ra IXTA4N60P Datasheet
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-sou IXTA4N60P Datasheet
Recommendation Recommendation Datasheet IXTA4N60P Datasheet




IXTA4N60P
isc N-Channel MOSFET Transistor
·FEATURES
·Static drain-source on-resistance:
RDS(on) ≤ 2.0@VGS=10V
·Fully characterized avalanche voltage and current
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION
·DC/DC Converter
·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
4
IDM
Drain Current-Single Pulsed
10
PD
Total Dissipation @TC=25
89
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX
1.40
UNIT
/W
IXTA4N60P
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark



IXTA4N60P
isc N-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID = 250μA
VGS(th) Gate Threshold Voltage
VDS=VGS; ID = 100μA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID= 2A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS=0V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
VDS= VDSS; VGS= 0V
VDS= VDSS; VGS= 0V;TJ= 125
IF= 4A; VGS = 0V
IXTA4N60P
MIN MAX UNIT
600
V
3.0
5.5
V
2.0
Ω
±100
nA
1
μA
50
1.5
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)