isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
:...
isc N-Channel MOSFET
Transistor
·FEATURES ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) ≤ 210mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Easy to Mount ·Space Savings ·High Power Density
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
20
A
IDM
Drain Current-Single Plused
40
A
PD
Total Dissipation @TC=25℃
320
W
Tj
Max. Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX 0.39
UNIT ℃/W
IXTA20N65X
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
IXTA20N65X
·ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYPE MAX UNIT
V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250uA
650
V
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 250uA
3
5.5
V
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID= 10A
210 mΩ
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0 VDS= 650V; VGS= 0;TJ=125℃
VSD
Diode Forward On-voltage
IF= 20A ;VGS= 0
±100 nA
5 50
µA
1.4
V
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