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IXTA24P085T
P-Channel MOSFET
Description
isc P-Channel MOSFET
Transistor
IXTA24P085T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤65mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current
regulator
s ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS...
INCHANGE
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