IXTP4N70X2

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2 VDSS = ID25 =  RDS(on) 700V 4A 850m TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 4 8 2 150 50 80 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.in TO-251 TO-252 TO-263 TO-220 0.40 g 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 700 V 2.5 4.5 V 100 nA 5 A 50 A 850 m G D S TO-252 (IXTY) D (Tab) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy...