Power MOSFET. IXTA05N100HV Datasheet

IXTA05N100HV MOSFET. Datasheet pdf. Equivalent


Part IXTA05N100HV
Description Power MOSFET
Feature High Voltage Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA05N100HV IXTA05N100 IXTP05.
Manufacture IXYS
Datasheet
Download IXTA05N100HV Datasheet


High Voltage Power MOSFET N-Channel Enhancement Mode Avalanc IXTA05N100HV Datasheet
Recommendation Recommendation Datasheet IXTA05N100HV Datasheet




IXTA05N100HV
High Voltage
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA05N100HV
IXTA05N100
IXTP05N100
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
IS IDM, VDD VDSS, TJ 150C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-220
TO-263
TO-263HV
Maximum Ratings
1000
V
1000
V
30
V
40
V
750
mA
3
A
1
A
100
mJ
3
V/ns
40
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
3.0
g
2.5
g
2.5
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 375mA, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
2.5
4.5 V
100 nA
25 A
500 A
17
VDSS =
ID25 =
RDS(on)
1000V
750mA
17
TO-263HV (IXTA)
G
S
D (Tab)
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
High Voltage Package (TO-263HV)
Fast Switching Times
Avalanche Rated
Rds(on) HDMOSTM Process
Rugged Polysilicon Gate Cell structure
Extended FBSOA
Advantages
High Power Density
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
Flyback Inverters
DC Choppers
© 2014 IXYS CORPORATION, All rights reserved
DS98736F(5/14)



IXTA05N100HV
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 20V, ID = 500mA, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RG = 47(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 1A
RthJC
RthCS
(TO-220)
IXTA05N100HV IXTA05N100
IXTP05N100
Characteristic Values
Min. Typ. Max.
TO-263AA Outline
0.55
0.93
S
260
pF
22
pF
8
pF
11
ns
19
ns
40
ns
PIN: 1 - Gate
28
ns
2,4 - Source
3 - Drain
7.8
nC
1.4
nC
4.1
nC
3.1 C/W
0.50 C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = IS, -di/dt = 100A/s
VR = 100V, VGS = 0V
Characteristic Values
Min. Typ. Max.
750 mA
3A
1.5 V
710
ns
TO-220AB Outline
Note 1: Pulse test, t 300s, duty cycle, d 2%.
TO-263HV Outline
Pins: 1 - Gate
3 - Source
2 - Drain
PIN: 1 - Gate
2 - Source
3 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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