Document
Preliminary Technical Information
X2-Class Power MOSFET
N-Channel Enhancement Mode
IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2
VDSS =
ID25 = RDS(on)
700V 8A 500m
TO-251 (IXTU)
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient
Maximum Ratings
700
V
700
V
30
V
40
V
TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
8 16
4 250
50 150 -55 ... +150 150 -55 ... +150
A A
A mJ V/ns
W C C C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6
Mounting Torque (TO-220)
1.13 / 10
N/lb Nm/lb.in
TO-251 TO-252 TO-263 TO-220
0.40
g
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values Min. Typ. Max.
700
V
3.0
5.0 V
100 nA
10 A 250 A
500 m
G D S
TO-252 (IXTY)
D (Tab)
G S
TO-263 (IXTA)
D (Tab)
G S
TO-220 (IXTP)
D (Tab)
G DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode and Resonant-Mode Power Supplies
DC-DC Converters PFC Circuits AC and DC Motor Drives Robotics and Servo Controls
© 2018 IXYS CORPORATION, All Rights Reserved
DS100757B(6/18)
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
RGi
Gate Input Resistance
Ciss Coss Crss
VGS = 0V, VDS = 25V, f = 1MHz
Co(er) Co(tr)
Effective Output Capacitance
Energy related Time related
VGS = 0V VDS = 0.8 • VDSS
td(on) tr td(off) tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External)
Qg(on) Qgs Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC RthCS
TO-220
IXTU8N70X2 IXTA8N70X2
Characteristic Values Min. Typ. Max
4.8
8.0
S
6
800
pF
495
pF
2.2
pF
43 129
24 28 53 24 12.0 3.1 4.4
0.50
pF pF
ns ns ns ns
nC nC nC 0.83 C/W C/W
IXTY8N70X2 IXTP8N70X2
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr QRM IRM
IF = 4A, -di/dt = 100A/μs VR = 100V
Characteristic Values Min. Typ. Max
8A
32 A
1.4 V
200 1.65 16.3
ns μC
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961 5,063,307 5,187,117
5,237,481 5,381,025 5,486,715
6,162,665 6,259,123B1 6,306,728B1
6,404,065B1 6,534,343 6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537
ID - Amperes
Fig. 1. Output Characteristics @ TJ = 25oC
8
VGS = 10V
7
8V
7V
6 6V
5
4
3
2
1
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
8
VGS = 10V
7
7V
6
6V
5
4
3
5V
2
1
4V
0
0
1
2
3
4
5
6
7
8
9
10
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current
4.5
4.0
VGS = 10V
3.5
TJ = 125oC
3.0
2.5 TJ = 25oC
2.0
1.5
1.0
0.5
0
2
4
6
8
10
12
14
16
18
ID - Amperes
ID - Amperes
RDS(on) - Normalized
ID - Amperes
IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2
Fig. 2. Extended Output Characteristics @ TJ = 25oC
18
VGS = 10V
16
8V
14 7V
12
10
8
6 6V
4
2
5V
0
0
4
8
12
16
20
24
28
32
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature
4.0
3.5
VGS = 10V
3.0
2.5
I D = 8A
2.0
I D = 4A 1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs.
Case Temperature
9
8
7
6
5
4
3
2
1
0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
ID - Amperes
RDS(on) - Normalized
© 2018 IXYS CORPORATION, All Righ.