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IXTA8N70X2 Dataheets PDF



Part Number IXTA8N70X2
Manufacturers IXYS
Logo IXYS
Description Power MOSFET
Datasheet IXTA8N70X2 DatasheetIXTA8N70X2 Datasheet (PDF)

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(on) 700V 8A 500m TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ.

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 VDSS = ID25 =  RDS(on) 700V 8A 500m TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 8 16 4 250 50 150 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque (TO-220) 1.13 / 10 N/lb Nm/lb.in TO-251 TO-252 TO-263 TO-220 0.40 g 0.35 g 2.50 g 3.00 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 250μA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 700 V 3.0 5.0 V 100 nA 10 A 250 A 500 m G D S TO-252 (IXTY) D (Tab) G S TO-263 (IXTA) D (Tab) G S TO-220 (IXTP) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  International Standard Packages  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-DC Converters  PFC Circuits  AC and DC Motor Drives  Robotics and Servo Controls © 2018 IXYS CORPORATION, All Rights Reserved DS100757B(6/18) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 10V, ID = 0.5 • ID25, Note 1 RGi Gate Input Resistance Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz Co(er) Co(tr) Effective Output Capacitance Energy related Time related VGS = 0V VDS = 0.8 • VDSS td(on) tr td(off) tf Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 30 (External) Qg(on) Qgs Qgd VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RthJC RthCS TO-220 IXTU8N70X2 IXTA8N70X2 Characteristic Values Min. Typ. Max 4.8 8.0 S 6  800 pF 495 pF 2.2 pF 43 129 24 28 53 24 12.0 3.1 4.4 0.50 pF pF ns ns ns ns nC nC nC 0.83 C/W C/W IXTY8N70X2 IXTP8N70X2 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Repetitive, pulse Width Limited by TJM VSD IF = IS, VGS = 0V, Note 1 trr QRM IRM IF = 4A, -di/dt = 100A/μs VR = 100V Characteristic Values Min. Typ. Max 8A 32 A 1.4 V 200 1.65 16.3 ns μC A Note 1. Pulse test, t  300s, duty cycle, d 2%. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 by one or more of the following U.S. patents: 4,860,072 5,017,508 4,881,106 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123B1 6,306,728B1 6,404,065B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734B2 7,157,338B2 6,710,405B2 6,759,692 7,063,975B2 6,710,463 6,771,478B2 7,071,537 ID - Amperes Fig. 1. Output Characteristics @ TJ = 25oC 8 VGS = 10V 7 8V 7V 6 6V 5 4 3 2 1 5V 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VDS - Volts Fig. 3. Output Characteristics @ TJ = 125oC 8 VGS = 10V 7 7V 6 6V 5 4 3 5V 2 1 4V 0 0 1 2 3 4 5 6 7 8 9 10 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 4A Value vs. Drain Current 4.5 4.0 VGS = 10V 3.5 TJ = 125oC 3.0 2.5 TJ = 25oC 2.0 1.5 1.0 0.5 0 2 4 6 8 10 12 14 16 18 ID - Amperes ID - Amperes RDS(on) - Normalized ID - Amperes IXTU8N70X2 IXTY8N70X2 IXTA8N70X2 IXTP8N70X2 Fig. 2. Extended Output Characteristics @ TJ = 25oC 18 VGS = 10V 16 8V 14 7V 12 10 8 6 6V 4 2 5V 0 0 4 8 12 16 20 24 28 32 VDS - Volts Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature 4.0 3.5 VGS = 10V 3.0 2.5 I D = 8A 2.0 I D = 4A 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Maximum Drain Current vs. Case Temperature 9 8 7 6 5 4 3 2 1 0 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade ID - Amperes RDS(on) - Normalized © 2018 IXYS CORPORATION, All Righ.


IXTY8N70X2 IXTA8N70X2 IXTP8N70X2


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