Power MOSFET. IXTA10N60P Datasheet

IXTA10N60P MOSFET. Datasheet pdf. Equivalent


Part IXTA10N60P
Description Power MOSFET
Feature PolarTM Power MOSFET IXTA10N60P IXTP10N60P N-Channel Enhancement Mode Avalanche Rated Fast Intrins.
Manufacture IXYS
Datasheet
Download IXTA10N60P Datasheet


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IXTA10N60P
PolarTM
Power MOSFET
IXTA10N60P
IXTP10N60P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
VDSS = 600V
ID25 = 10A
RDS(on) 740mΩ
TO-263 AA (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-263
TO-220
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Maximum Ratings
600
V
600
V
±30
V
±40
V
10
A
25
A
10
A
500
mJ
10
V/ns
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
±100 nA
5 μA
50 μA
740 mΩ
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z Dynamic dv/dt Rating
z Avalanche Rated
z Fast Intrinsic Rectifier
z Low QG
z Low RDS(on)
z Low Drain-to-Tab Capacitance
z Low Package Inductance
Advantages
z Easy to Mount
z Space Savings
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterrupted Power Supplies
z AC Motor Drives
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99330F(04/10)



IXTA10N60P
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Time
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCH
TO-220
Characteristic Values
Min. Typ. Max.
6
11
S
1720
pF
160
pF
14
pF
23
ns
27
ns
65
ns
21
ns
32
nC
12
nC
10
nC
0.50
0.62 °C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 10A, VGS = 0V
-di/dt = 100A/μs, VR = 100V
Characteristic Values
Min. Typ. Max.
10 A
30 A
1.5 V
500
ns
IXTA10N60P
IXTP10N60P
TO-263 Outline
TO-220 Outline
Notes: 1. Pulse test, t 300μs, duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537





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