Power MOSFET
PolarTM Power MOSFET
IXTA10N60P IXTP10N60P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS =...
Description
PolarTM Power MOSFET
IXTA10N60P IXTP10N60P
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
VDSS = 600V ID25 = 10A RDS(on) ≤ 740mΩ
TO-263 AA (IXTA)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Notes 1, 2
Maximum Ratings
600
V
600
V
±30
V
±40
V
10
A
25
A
10
A
500
mJ
10
V/ns
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300 260
1.13 / 10
2.5 3.0
°C °C
Nm/lb.in.
g g
Characteristic Values Min. Typ. Max.
600
V
3.0
5.5 V
±100 nA
5 μA 50 μA
740 mΩ
G S D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
z International Standard Packages z Dynamic dv/dt Rating z Avalanche Rated z Fast Intrinsic Rectifier z Low QG z Low RDS(on) z Low Drain-to-Tab Capacitance z Low Package Inductance
Advantages
z Easy to Mount z Space Savings
Applications
z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z Uni...
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