Power MOSFET
TrenchTM Power MOSFET
IXTA32N20T IXTP32N20T
VDSS = 200V
ID25 = 32A RDS(on) ≤ 78mΩ
N-Channel Enhancement Mode Avalanch...
Description
TrenchTM Power MOSFET
IXTA32N20T IXTP32N20T
VDSS = 200V
ID25 = 32A RDS(on) ≤ 78mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Mounting Torque (TO-220) TO-263 TO-220
Maximum Ratings
200
V
200
V
±20
V
±30
V
32
A
64
A
16
A
250
mJ
10
V/ns
200
W
- 55 ... +175
°C
175
°C
- 55 ... +175
°C
300 260
1.13 / 10
2.5 3.0
°C °C
Nm/lb.in.
g g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Notes 1, 2
Characteristic Values Min. Typ. Max.
200
V
3.0
5.0 V
±100 nA
3 μA 200 μA
78 mΩ
TO-263 AA (IXTA)
G S D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
z International Standard Packages z 175°C Operating Temperature z Avalanche Rated z Low RDS(on) z Fast Intrinsic Rectifier z High Current Handling Capability
Advantages
z Easy to Mount z Space Savings z High Power Density
Applications
z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode
Power Supplies z DC C...
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