Power MOSFET. IXTP32N20T Datasheet

IXTP32N20T MOSFET. Datasheet pdf. Equivalent


Part IXTP32N20T
Description Power MOSFET
Feature TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID25 = 32A RDS(on) ≤ 78mΩ N-Channel Enhan.
Manufacture IXYS
Datasheet
Download IXTP32N20T Datasheet


TrenchTM Power MOSFET IXTA32N20T IXTP32N20T VDSS = 200V ID IXTP32N20T Datasheet
isc N-Channel MOSFET Transistor IXTP32N20T ·FEATURES ·Stat IXTP32N20T Datasheet
Recommendation Recommendation Datasheet IXTP32N20T Datasheet




IXTP32N20T
TrenchTM
Power MOSFET
IXTA32N20T
IXTP32N20T
VDSS = 200V
ID25 = 32A
RDS(on) 78mΩ
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Tsold
Md
Weight
Test Conditions
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 175°C
TC = 25°C
1.6mm (0.062in.) from Case for 10s
Plastic Body for 10 Seconds
Mounting Torque (TO-220)
TO-263
TO-220
Maximum Ratings
200
V
200
V
±20
V
±30
V
32
A
64
A
16
A
250
mJ
10
V/ns
200
W
- 55 ... +175
°C
175
°C
- 55 ... +175
°C
300
260
1.13 / 10
2.5
3.0
°C
°C
Nm/lb.in.
g
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS, VGS= 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Notes 1, 2
Characteristic Values
Min. Typ. Max.
200
V
3.0
5.0 V
±100 nA
3 μA
200 μA
78 mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
GD S
D (Tab)
G = Gate
S = Source
D = Drain
Tab = Drain
Features
z International Standard Packages
z 175°C Operating Temperature
z Avalanche Rated
z Low RDS(on)
z Fast Intrinsic Rectifier
z High Current Handling Capability
Advantages
z Easy to Mount
z Space Savings
z High Power Density
Applications
z DC-DC Converters
z Battery Chargers
z Switch-Mode and Resonant-Mode
Power Supplies
z DC Choppers
z AC Motor Drives
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS99959B(10/10)



IXTP32N20T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 10Ω (External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCH
TO-220
Characteristic Values
Min. Typ. Max.
18
30
S
1760
pF
212
pF
31
pF
14
ns
18
ns
55
ns
31
ns
38
nC
12
nC
13
nC
0.50
0.75 °C/W
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IF = 0.5 • ID25, VGS = 0V
IRM
-di/dt = 100A/μs
QRM
VR = 0.5 • VDSS
Characteristic Values
Min. Typ. Max.
32 A
128 A
1.2 V
110
ns
6.90
A
0.38
nC
IXTA32N20T
IXTP32N20T
TO-263 Outline
TO-220 Outline
Notes:
1. Pulse test, t 300μs, duty cycle, d 2%.
2. On through-hole packages, RDS(on) Kelvin test contact location must be
5mm or less from the package body.
Pins: 1 - Gate
3 - Source
2 - Drain
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)