IXTA50N20P

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 60mΩ ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 200 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 50 IDM Drain Current-Single Pulsed 120 PD Total Dissipation @TC=25℃ 360 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~125 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.42 UNIT ℃/W IXTA50N20P isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID =250μA RDS(on) Drain-Source On-Resistance VGS=10V; ID= 50A IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ=150℃ IF= 50A; VGS = 0V IXTA50N20P MIN MAX UNIT 200 V 2.5 5.0 V 60 mΩ ±100 nA 25 μA 250 1.5 V NOTICE： ISC reserves the rights to make changes of the content here...