Power MOSFET. IXTH64N10L2 Datasheet

IXTH64N10L2 MOSFET. Datasheet pdf. Equivalent


Part IXTH64N10L2
Description Power MOSFET
Feature Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTA64N10L2 IXTP64N10L2.
Manufacture IXYS
Datasheet
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IXTH64N10L2
Preliminary Technical Information
LinearL2TM
Power MOSFET
w/Extended FBSOA
IXTA64N10L2
IXTP64N10L2
IXTH64N10L2
VDSS = 100V
ID25 = 64A
RDS(on) 32m
N-Channel Enhancement Mode
Guaranteed FBSOA
Avalanche Rated
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
FC
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
Maximum Ratings
100
V
100
V
20
V
30
V
TC = 25C
64
A
TC = 25C, Pulse Width Limited by TJM
140
A
TC = 25C
TC = 25C
32
A
2
J
TC = 25C
357
W
-55 to +150
C
+150
C
-55 to +150
C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Force (TO-263)
10..65 / 2.2..14.6
Mounting Torque (TO-220 & TO-247)
1.13 / 10
N/lb
Nm/lb.in
TO-263
TO-220
TO-247
2.5
g
3.0
g
6.0
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
100
V
2.5
4.5 V
100 nA
5 A
25 A
32 m
TO-263
(IXTA)
TO-220
(IXTP)
G
S
D (Tab)
G
DS
TO-247
(IXTH)
D (Tab)
G
DS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
Designed for Linear Operation
International Standard Packages
Avalanche Rated
Guaranteed FBSOA at 75C
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
Solid State Circuit Breakers
Soft Start Controls
Linear Amplifiers
Programmable Loads
Current Regulators
© 2018 IXYS CORPORATION, All Rights Reserved
DS100557A(11/18)



IXTH64N10L2
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = 25V, f = 1MHz
RGi
Integrated Gate Input Resistor
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 0(External)
Qg(on)
Qgs
Qgd
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
TO-247
IXTA64N10L2
Characteristic Values
Min. Typ. Max.
21
27 33 S
3620
pF
720
pF
235
pF
1.2
14
ns
27
ns
38
ns
11
ns
100
nC
16
nC
45
nC
0.50
0.21
0.35 C/W
C/W
C/W
IXTP64N10L2
IXTH64N10L2
Safe Operating Area Specification
Symbol
SOA
Test Conditions
VDS = 100V, ID = 2.15A, TC = 75°C, Tp = 5s
Characteristic Values
Min. Typ. Max.
215
W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
IRM
QRM
IF = 32A, -di/dt = 100A/s,
VR = 50V, VGS = 0V
Note 1. Pulse test, t 300s, duty cycle, d 2%.
Characteristic Values
Min. Typ. Max.
64 A
256 A
1.4 V
180
ns
16.2
A
1.46
μC
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







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