IXTH64N10L2

Preliminary Technical Information LinearL2TM Power MOSFET w/Extended FBSOA IXTA64N10L2 IXTP64N10L2 IXTH64N10L2 VDSS = 100V ID25 = 64A  RDS(on) 32m N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V 20 V 30 V TC = 25C 64 A TC = 25C, Pulse Width Limited by TJM 140 A TC = 25C TC = 25C 32 A 2 J TC = 25C 357 W -55 to +150 C +150 C -55 to +150 C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Force (TO-263) 10..65 / 2.2..14.6 Mounting Torque (TO-220 & TO-247) 1.13 / 10 N/lb Nm/lb.in TO-263 TO-220 TO-247 2.5 g 3.0 g 6.0 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS = 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 100 V 2.5 4.5 V 100 nA 5 A 25 A 32 m TO-263 (IXTA) TO-220 (IXTP) G S D (Tab) G DS TO-247 (IXTH) D (Tab) G DS D (Tab) G = Gate D = Drain S = Source Tab = Drain Features  Designed for Linear Operation  International Standard Packages  Avalanche Rated  Guaranteed FBSOA at 75C Advantages  Easy to Mount  Space Savings  High Power Density Applicati...