DatasheetsPDF.com

IXTA98N075T

INCHANGE

N-Channel MOSFET

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·100% avalanche te...


INCHANGE

IXTA98N075T

File Download Download IXTA98N075T Datasheet


Description
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 10mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·High Current Switching Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 75 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 98 IDM Drain Current-Single Pulsed 280 PD Total Dissipation @TC=25℃ 230 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.65 UNIT ℃/W IXTA98N075T isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTA98N075T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 75 V VGS(th) Gate Threshold Voltage VDS=VGS; ID = 100μA 2.0 4.0 V RDS(on) Drain-Source On-Resistance VGS=10V; ID= 25A 10 mΩ IGSS Gate-Source Leakage Current VGS= ±20V;VDS=0V ±200 nA IDSS Drain-Source Leakage Current VSD Diode forward voltage VDS= VDSS; VGS= 0V VDS= VDSS; VGS= 0V;TJ= 150℃ IF= 98A; VGS = 0V 2 μA 150 1.5 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)