Power MOSFET
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA120N075T2 IXTP120N075T2
Symbol
VDSS VDGR
VGSM
I...
Description
TrenchT2TM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA120N075T2 IXTP120N075T2
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg TL TSOLD FC Md Weight
Test Conditions
Maximum Ratings
TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M
Transient
75
V
75
V
20
V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
TC = 25C
120 300
60 600
250
-55 ... +175 175
-55 ... +175
A A
A mJ
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
1.6 mm (0.062in.) from Case for 10s
260
°C
Mounting Force (TO-263) Mounting Torque (TO-220)
10..65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220
2.5
g
3.0
g
Symbol
Test Conditions
(TJ = 25C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250A
VGS(th)
VDS = VGS, ID = 250A
IGSS
VGS = 20V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 150C
RDS(on)
VGS = 10V, ID = 60A, Notes 1 & 2
Characteristic Values Min. Typ. Max.
75
V
2.0
4.0 V
200 nA
5 A 150 A
7.7 m
VDSS =
ID25 = RDS(on)
75V 120A 7.7m
TO-263 (IXTA)
G S D (Tab)
TO-220 (IXTP)
G DS
D (Tab)
G = Gate D = Drain S = Source Tab = Drain
Features
International Standard Packages Avalanche Rated Low Package Inductance Fast Intrinsic Rectifier
175°C Operating Temperature High Current Handling Capability ROHS Compliant High Performance Trench
Technology for extremely low RDS(on)
Advantages
High Power Density Easy to Mount Space Savings
Applications
Au...
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