IXTA90N15T

Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA90N15T IXTH90N15T IXTP90N15T IXTQ90N15T VDSS = ID25 = RDS(on) ≤ 150V 90A 20mΩ Symbol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ TC = 25°C * Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = TC = 25°C 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 150 150 ± 30 90 75 250 4 750 10 455 -55 ... +175 175 -55 ... +175 1.6mm (0.062 in.) from case for 10s 300 Plastic body for 10 seconds 260 Mounting Torque(TO-220,TO-3P,TO-247) 1.13/10 Mounting Force (TO-263) 10..65/2.2..14.6 TO-263 2.5 TO-220 3 TO-3P 5.5 TO-247 6 V V V A A A A μJ V/ns W °C °C °C °C °C Nm/lb.in. N/lb. g g g g Symbol Test Conditions (TJ = 25°C, unless otherwise specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 150 V 2.5 4.5 V ± 200 nA 5 μA 250 μA 17 20 mΩ TO-263 (IXTA) G S TO-247 (IXTH) (TAB) TO-220 (IXTP) (TAB) GDS TO-3P (IXTQ) (TAB) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain Features z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Applications z DC-DC converters z ...