Power MOSFET. IXTA90N15T Datasheet

IXTA90N15T MOSFET. Datasheet pdf. Equivalent


Part IXTA90N15T
Description Power MOSFET
Feature Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rat.
Manufacture IXYS
Datasheet
Download IXTA90N15T Datasheet


isc N-Channel MOSFET Transistor IXTA90N15T ·FEATURES ·Stat IXTA90N15T Datasheet
Preliminary Technical Information Trench Gate Power MOSFET IXTA90N15T Datasheet
Recommendation Recommendation Datasheet IXTA90N15T Datasheet




IXTA90N15T
Preliminary Technical Information
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA90N15T
IXTH90N15T
IXTP90N15T
IXTQ90N15T
VDSS =
ID25 =
RDS(on)
150V
90A
20mΩ
Symbol
VDSS
VDGR
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 175°C
TJ = 25°C to 175°C, RGS = 1MΩ
TC = 25°C *
Lead Current Limit, RMS
TC = 25°C, pulse width limited by TJM
TC =
TC =
25°C
25°C
IS IDM, VDD VDSS, TJ 175°C
TC = 25°C
150
150
± 30
90
75
250
4
750
10
455
-55 ... +175
175
-55 ... +175
1.6mm (0.062 in.) from case for 10s
300
Plastic body for 10 seconds
260
Mounting Torque(TO-220,TO-3P,TO-247)
1.13/10
Mounting Force (TO-263)
10..65/2.2..14.6
TO-263
2.5
TO-220
3
TO-3P
5.5
TO-247
6
V
V
V
A
A
A
A
μJ
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
g
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ. Max.
150
V
2.5
4.5 V
± 200 nA
5 μA
250 μA
17
20 mΩ
TO-263 (IXTA)
G
S
TO-247 (IXTH)
(TAB)
TO-220 (IXTP)
(TAB)
GDS
TO-3P (IXTQ)
(TAB)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Applications
z DC-DC converters
z Battery chargers
z Switched-mode and resonant-mode
power supplies
z DC choppers
z AC motor control
z Uninterruptible power supplies
© 2007 IXYS CORPORATION, All rights reserved
DS99857(08/07)



IXTA90N15T
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
gfs
Ciss
Coss
Crss
VDS= 10V, ID = 0.5 ID25, Note 1
VGS = 0V, VDS = 25V, f = 1MHz
td(on)
tr
td(off)
tf
Qg(on)
Qgs
Qgd
Resistive Switching Times
VGS = 15V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 3.3Ω (External)
VGS= 10V, VDS = 0.5 VDSS, ID = 25A
RthJC
RthCH
TO-220
TO-3P, TO-263, TO-247
Characteristic Values
Min. Typ.
Max.
IXTA90N15T
IXTP90N15T
IXTH90N15T
IXTQ90N15T
40 69
S
4100
pF
560
pF
92
pF
24
ns
22
ns
44
ns
19
ns
80
nC
20
nC
20
nC
0.33 °C/W
0.25
°C/W
0.21
°C/W
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
IS
VGS = 0V
ISM
Repetitive
VSD
IF = 50A, VGS = 0V, Note 1
trr
IF =45A, -di/dt = 250A/μs
VR = 75V, VGS = 0V
Characteristic Values
Min. Typ. Max.
90 A
300 A
1.2 V
110
ns
Note 1: Pulse test, t 300μs; duty cycle, d 2%.
*: Current may be limited by external terminal current limit.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2 7,157,338B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)