IXTP110N12T2

TrenchT2TM Power MOSFET Advance Technical Information IXTA110N12T2 IXTP110N12T2 VDSS = 120V ID25 = 110A RDS(on)  14m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C Maximum Lead Temperature for Soldering Plastic Body for 10s Mounting Torque (TO-220) TO-263 TO-220 Maximum Ratings 120 V 120 V 20 V 30 V 110 A 200 A 55 A 800 mJ 517 W -55 ... +175 175 -55 ... +175  C  C  C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 2.5 g 3.0 g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250A VGS(th) VDS = VGS, ID = 250A IGSS VGS =  20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150C RDS(on) VGS = 10V, ID = 0.5 ID25, Notes 1, 2 Characteristic Values Min. Typ. Max. 120 V 2.5 4.5 V             200 nA 5 A 350 A 11.4 14.0 m G S D (Tab) TO-220AB (IXTP) GDS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features  International Standard Packages  175°C Operating Temperature  Avalanche Rated  Low RDS(on)  Fast Intrinsic Rectifier  High Current Handling Capability Advantages  Easy to Mount  Space Savings  High Power Density Applications  Synchronous Rectification  DC/DC Converters and Off-Line ...