Schottky Diode. FFSB0665B-F085 Datasheet

FFSB0665B-F085 Diode. Datasheet pdf. Equivalent


Part FFSB0665B-F085
Description Silicon Carbide Schottky Diode
Feature Silicon Carbide Schottky Diode 650 V, 6 A FFSB0665B-F085 Silicon Carbide (SiC) Schottky Diodes use.
Manufacture ON Semiconductor
Datasheet
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Silicon Carbide Schottky Diode 650 V, 6 A FFSB0665B-F085 S FFSB0665B-F085 Datasheet
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FFSB0665B-F085
Silicon Carbide Schottky
Diode
650 V, 6 A
FFSB0665B-F085
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 24.5 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
AECQ101 Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Automotive HEVEV Onboard Chargers
Automotive HEVEV DCDC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (TJ = 25°C,
IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V)
VRRM
EAS
650
V
24.5 mJ
Continuous Rectified Forward @ TC < 150
IF
Current
@ TC < 135
NonRepetitive Peak Forward
TC = 25°C
IFM
Surge Current
tP = 10 ms
6.0
A
8.0
523
A
TC = 150°C
467
tP = 10 ms
NonRepetitive Forward Surge
Current (HalfSine Pulse)
TC = 25°C
tP = 8.3 ms
IFSM
45
A
Power Dissipation
TC = 25°C
Ptot
61
W
TC = 150°C
10
Operating Junction and Storage Temperature
Range
TJ, Tstg 55 to °C
+175
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
VRRM
650 V
IF
6.0 A
1., 3. Cathode 2. Anode
Schottky Diode
3
1
2
D2PAK2
TO263
CASE 418BK
MARKING DIAGRAM
&Z&3&K
FFSB
0665B
&Z
&3
&K
FFSB0665B
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2019
1
August, 2020 Rev. 1
Publication Order Number:
FFSB0665BF085/D



FFSB0665B-F085
FFSB0665BF085
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, JunctiontoCase, Max.
Symbol
RqJC
Value
2.46
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON CHARACTERISTICS
Forward Voltage
VF
Reverse Current
IR
CHARGES, CAPACITANCES & GATE RESISTANCE
IF = 6.0 A, TJ = 25°C
IF = 6.0 A, TJ = 125°C
IF = 6.0 A, TJ = 175°C
VR = 650 V, TJ = 25°C
VR = 650 V, TJ = 125°C
VR = 650 V, TJ = 175°C
1.38
1.7
V
1.53
2.0
1.67
2.4
0.5
40
mA
1.0
80
2.0
160
Total Capacitive Charge
QC
VC = 400 V
Ctot
VR = 1 V, f = 100 kHz
16
nC
259
pF
VR = 200 V, f = 100 kHz
29
VR = 400 V, f = 100 kHz
22
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package Packing Method Reel Size
Tape Width
Quantity
FFSB0665BF085
FFSB0665B
D2PAK
Tape & Reel
330 mm
24 mm
800 Units
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2







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