Silicon Carbide Schottky Diode
650 V, 6 A
FFSB0665B-F085
Silicon Carbide (SiC) Schottky Diodes use a completely new te...
Silicon Carbide
Schottky Diode
650 V, 6 A
FFSB0665B-F085
Silicon Carbide (SiC)
Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features
Max Junction Temperature 175°C Avalanche Rated 24.5 mJ High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse Recovery / No Forward Recovery AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
Automotive HEV−EV Onboard Chargers Automotive HEV−EV DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 9.9 A, L = 0.5 mH, V = 50 V)
VRRM EAS
650
V
24.5 mJ
Continuous Rectified Forward @ TC < 150
IF
Current
@ TC < 135
Non−Repetitive Peak Forward
TC = 25°C
IFM
Surge Current
tP = 10 ms
6.0
A
8.0
523
A
TC = 150°C
467
tP = 10 ms
Non−Repetitive Forward Surge Current (Half−Sine Pulse)
TC = 25°C tP = 8.3 ms
IFSM
45
A
Power Dissipation
TC = 25°C
Ptot
61
W
TC = 150°C
...