Schottky Diode. FFSB10120A Datasheet

FFSB10120A Diode. Datasheet pdf. Equivalent


Part FFSB10120A
Description Silicon Carbide Schottky Diode
Feature FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A Description Silicon Carbide (SiC) Schottky Di.
Manufacture ON Semiconductor
Datasheet
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FFSB10120A Silicon Carbide Schottky Diode 1200 V, 10 A Descr FFSB10120A Datasheet
Silicon Carbide Schottky Diode 1200 V, 10 A FFSB10120A-F085 FFSB10120A-F085 Datasheet
Recommendation Recommendation Datasheet FFSB10120A Datasheet




FFSB10120A
FFSB10120A
Silicon Carbide Schottky
Diode
1200 V, 10 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size & cost.
Features
Max Junction Temperature 175°C
Avalanche Rated 100 mJ
High Surge Current Capacity
Positive Temperature Coefficient
Ease of Paralleling
No Reverse Recovery / No Forward Recovery
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Applications
General Purpose
SMPS, Solar Inverter, UPS
Power Switching Circuits
www.onsemi.com
1., 3. Cathode 2. Anode
Schottky Diode
3
1
2
D2PAK3 (TO263, 3LEAD)
CASE 418AJ
MARKING DIAGRAM
$Y&Z&3&K
FFSB
10120A
$Y
&Z
&3
&K
FFSB10120A
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
September, 2019 Rev. 1
Publication Order Number:
FFSB10120A/D



FFSB10120A
FFSB10120A
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
VRRM
EAS
IF
IF, Max
IF,SM
IF,RM
Ptot
TJ, TSTG
Peak Repetitive Reverse Voltage
Single Pulse Avalanche Energy (Note 1)
Continuous Rectified Forward Current @ TC < 164°C
Continuous Rectified Forward Current @ TC < 135°C
Non-Repetitive Peak Forward Surge Current TC = 25°C, 10 ms
TC = 150°C, 10 ms
Non-Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Repetitive Forward Surge Current
Half-Sine Pulse, tp = 8.3 ms
Power Dissipation
TC = 25°C
TC = 150°C
Operating and Storage Temperature Range
TO247 Mounting Torque, M3 Screw
1200
100
10
21
850
800
90
35
283
47
55 to +175
60
V
mJ
A
A
A
A
A
W
W
°C
Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. EAS of 100 mJ is based on starting TJ = 25°C, L = 0.5 mH, IAS = 20 A, V = 50 V.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
Thermal Resistance, Junction to Case, Max
Value
0.53
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Parameter
Test Condition
Min
Typ
Max
Unit
VF
Forward Voltage
IF = 10 A, TC = 25°C
IF = 10 A, TC = 125°C
IF = 10 A, TC = 175°C
IR
Reverse Current
VR = 1200 V, TC = 25°C
VR = 1200 V, TC = 125°C
VR = 1200 V, TC = 175°C
QC
Total Capacitive Charge
V = 800 V
C
Total Capacitance
VR = 1 V, f = 100 kHz
VR = 400 V, f = 100 kHz
1.45
1.75
V
1.7
2.0
2.0
2.4
200
mA
300
400
62
nC
612
pF
58
VR = 800 V, f = 100 kHz
47
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number
FFSB10120A
Top Marking
FFSB10120A
Package
D2PAK3
(Pb-Free / Halogen Free)
Shipping
800 / Tape & Reel
www.onsemi.com
2







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