2N5880 & 2N5882
Complementary Power Transistors
General-purpose power amplifier and switching applications.
Features:
• ...
2N5880 & 2N5882
Complementary Power
Transistors
General-purpose power amplifier and switching applications.
Features:
Low Collector-Emitter Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 7.0A
Execellent DC current Gain hFE = 20 - 100 at IC = 6.0A
Pin 1. Base 2. Emitter Collector(Case)
Maximum Ratings
Dimensions Minimum Maximum
A
38.75
39.96
B
19.28
22.23
C
7.96
9.28
D
11.18
12.19
E
25.20
26.67
F
0.92
1.09
G
1.38
1.62
H
29.90
30.40
I
16.64
17.30
J
3.88
4.36
K
10.67
11.18
Dimensions : Millimetres
Characteristic
Symbol
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage Collector Current-Continuous
-Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range
Thermal Characteristics
VCEO VCBO VEBO
IC ICM IB
PD
TJ, TSTG
80
5.0 15 30 5.0 160 0.915 -65 to +200
Characteristic Thermal Resistance Junction to Case
Symbol Rθjc
Maximum 1.1
PNP
NPN
2N5880 2N5882
15 Ampere Complementary Silicon Power
Transistors 80 Volts 160 Watts
TO-3
Unit
V
A W W/°C °C
Unit °C/W
Page 1
31/05/05 V1.0
2N5880 & 2N5882
Complementary Power
Transistors
Figure-1 Power Derating
PD, Power Dissipation (Watts)
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1) (IC = 200mA, IB = 0)
Collector Cut off Current (VCE = 40V, IB = 0)
Collector Cut o...
