isc N-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤4.9Ω. ·Enhancement mode:
Vth = 2.5 ...
isc N-Channel MOSFET
Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤4.9Ω. ·Enhancement mode:
Vth = 2.5 to4.0V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
3
A
IDM
Drain Current-Single Pulsed
9
A
PD
Total Dissipation @TC=25℃
80
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX
UNIT
1.56
℃/W
TK3P80E
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.3mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=1.5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=640V; VGS= 0V
VSDF
Diode forward voltage
IDR =3A, VGS = 0 V
TK3P80E
MIN TYP MAX UNIT
800
V
2.5
4.0
V
4.9
Ω
±1 μA
10
μA
1.7
V
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