N-Channel MOSFET. TK7A55D Datasheet

TK7A55D MOSFET. Datasheet pdf. Equivalent


Part TK7A55D
Description N-Channel MOSFET
Feature iscN-Channel MOSFET Transistor TK7A55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.25Ω .
Manufacture INCHANGE
Datasheet
Download TK7A55D Datasheet


TK7A55D TOSHIBA Field Effect Transistor Silicon N Channel MO TK7A55D Datasheet
iscN-Channel MOSFET Transistor TK7A55D ·FEATURES ·Low drai TK7A55D Datasheet
Recommendation Recommendation Datasheet TK7A55D Datasheet




TK7A55D
iscN-Channel MOSFET Transistor
TK7A55D
·FEATURES
·Low drain-source on-resistance:
RDS(ON) = 1.25(MAX)
·Enhancement mode:
Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA)
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
550
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
7
A
IDM
Drain Current-Single Pulsed
28
A
PD
Total Dissipation @TC=25
35
W
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
3.57 /W
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TK7A55D
iscN-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.0mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=3.5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=550V; VGS= 0V
VSDF
Diode forward voltage
IDR =7A, VGS = 0 V
TK7A55D
MIN TYP MAX UNIT
550
V
2.4
4.4
V
1.25
Ω
±1 μA
10
μA
1.7
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not
designed for use in equipment which require specialized quality and/or reliability, or in equipment
which could have applications in hazardous environments, aerospace industry, or medical
field. Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark







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