TK4P55D

iscN-Channel MOSFET Transistor TK4P55D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 1.88Ω (MAX) ·Enhancement mode: Vth = 2.4 to 4.4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS ID IDM PD Tj Tstg Drain-Source Voltage 550 V Gate-Source Voltage ±30 V Drain Current-Continuous 4 A Drain Current-Single Pulsed 16 A Total Dissipation @TC=25℃ 80 W Max. Operating Junction Temperature 150 ℃ Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 1.56 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=2A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=550V; VGS= 0V VSDF Diode forward voltage IDR =4A, VGS = 0 V TK4P55D MIN TYP MAX UNIT 550 V 2.4 4.4 V 1.88 Ω ±1 μA 10 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained her...