TK75J04K3Z

iscN-Channel MOSFET Transistor TK75J04K3Z ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 3mΩ (MAX) ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=1.0mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 75 A IDM Drain Current-Single Pulsed 300 A PD Total Dissipation @TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1.0mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=38A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=40V; VGS= 0V VSDF Diode forward voltage IDR =75A, VGS = 0 V TK75J04K3Z MIN TYP MAX UNIT 40 V 3 4 V 3 mΩ ±1 μA 10 μA 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained here...