iscN-Channel MOSFET Transistor
TK6R7P06PL
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 6.7mΩ (MAX) (VGS = 10 V...
iscN-Channel MOSFET
Transistor
TK6R7P06PL
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 6.7mΩ (MAX) (VGS = 10 V) ·Enhancement mode:
Vth = 1.5 to 2.5V (VDS = 10 V, ID=0.3mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
46
A
IDM
Drain Current-Single Pulsed
190
A
PD
Total Dissipation @TC=25℃
66
W
Tj
Max. Operating Junction Temperature
175
℃
Tstg
Storage Temperature
-55~175 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT
2.24
℃/W
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iscN-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
RDS(on)
Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
VDS= 10V; ID=0.3mA VGS= 10V; ID=23A VGS= ±20V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS= 60V; VGS= 0V
VSDF
Diode forward voltage
IDR =46A, VGS = 0 V
TK6R7P06PL
MIN TYP MAX UNIT
60
V
1.5
2.5
V
6.7 mΩ
±0.1 μA
10
μA
1.5
V
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