TK20E60W5

Isc N-Channel MOSFET Transistor TK20E60W5 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 175mΩ (MAX) ·Enhancement mode: Vth = 3 to 4.5V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 20 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation @TC=25℃ 165 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.757 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark Isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=10A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 600V; VGS= 0V VSDF Diode forward voltage IDR =20A, VGS = 0 V TK20E60W5 MIN TYP MAX UNIT 600 V 3 4.5 V 175 mΩ ±1 μA 100 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co...