N-Channel MOSFET. TK7A80W Datasheet

TK7A80W MOSFET. Datasheet pdf. Equivalent


Part TK7A80W
Description N-Channel MOSFET
Feature MOSFETs Silicon N-Channel MOS (DTMOS) TK7A80W 1. Applications • Switching Voltage Regulators 2. Fea.
Manufacture Toshiba
Datasheet
Download TK7A80W Datasheet


isc N-Channel MOSFET Transistor TK7A80W ·FEATURES ·Low dra TK7A80W Datasheet
MOSFETs Silicon N-Channel MOS (DTMOS) TK7A80W 1. Applicatio TK7A80W Datasheet
Recommendation Recommendation Datasheet TK7A80W Datasheet




TK7A80W
MOSFETs Silicon N-Channel MOS (DTMOS)
TK7A80W
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 0.795 (typ.)
by using Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 3 to 4 V (VDS = 10 V, ID = 0.28 mA)
3. Packaging and Internal Circuit
TK7A80W
1: Gate
2: Drain
3: Source
TO-220SIS
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Single-pulse avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
Storage temperature
Isolation voltage (RMS)
Mounting torque
(Tc = 25)
(t = 1.0 s)
(Note 1)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
VDSS
VGSS
ID
IDP
PD
EAS
IAS
IDR
IDRP
Tch
Tstg
VISO(RMS)
TOR
800
±20
6.5
26
35
310
1.3
6.5
26
150
-55 to 150
2000
0.6
V
A
W
mJ
A
V
Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2016-11
©2016 Toshiba Corporation
1
2016-11-08
Rev.2.0



TK7A80W
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25 (initial), L = 333 mH, RG = 25 , IAS = 1.3 A
TK7A80W
Symbol
Rth(ch-c)
Rth(ch-a)
Max
Unit
3.57
/W
62.5
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
2
2016-11-08
Rev.2.0







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