N-Channel MOSFET. TK3P80E Datasheet

TK3P80E MOSFET. Datasheet pdf. Equivalent


Part TK3P80E
Description N-Channel MOSFET
Feature MOSFETs Silicon N-Channel MOS (π-MOS) TK3P80E 1. Applications • Switching Voltage Regulators 2. Fea.
Manufacture Toshiba
Datasheet
Download TK3P80E Datasheet


isc N-Channel MOSFET Transistor ·FEATURES ·Low drain-source TK3P80E Datasheet
MOSFETs Silicon N-Channel MOS (π-MOS) TK3P80E 1. Applicatio TK3P80E Datasheet
Recommendation Recommendation Datasheet TK3P80E Datasheet




TK3P80E
MOSFETs Silicon N-Channel MOS (π-MOS)
TK3P80E
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: RDS(ON) = 3.9 (typ.)
(2) Low leakage current : IDSS = 10 µA (max) (VDS = 640 V)
(3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.3 mA)
3. Packaging and Internal Circuit
TK3P80E
1: Gate
2: Drain(Heatsink)
3: Source
DPAK
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
800
V
Gate-source voltage
VGSS
±30
Drain current (DC)
(Note 1)
ID
3
A
Drain current (pulsed)
(Note 1)
IDP
9
Power dissipation
(Tc = 25)
PD
80
W
Single-pulse avalanche energy
(Note 2)
EAS
118
mJ
Avalanche current
IAR
3
A
Reverse drain current (DC)
(Note 1)
IDR
3
Reverse drain current (pulsed)
(Note 1)
IDRP
9
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
2014-02
1
2014-09-17
Rev.3.0



TK3P80E
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25(initial), L = 23.8 mH, RG = 25 , IAR = 3 A
TK3P80E
Symbol
Rth(ch-c)
Max
Unit
1.56
/W
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-09-17
Rev.3.0







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