isc N-Channel MOSFET Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.56Ω. ·Enhancement mode:
Vth =2.5 ...
isc N-Channel MOSFET
Transistor
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.56Ω. ·Enhancement mode:
Vth =2.5 to 3.5V (VDS = 10 V, ID=0.35mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
9.3
A
IDM
Drain Current-Single Pulsed
37.2
A
PD
Total Dissipation @TC=25℃
80
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 1.57
UNIT ℃/W
TK9P65W
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isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=10mA
VGS(th)
Gate Threshold Voltage
RDS(on) Drain-Source On-Resistance
IGSS
Gate-Source Leakage Current
VDS=10V; ID=0.35mA VGS=10V; ID=4.6A VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=650V; VGS= 0V
VSDF
Diode forward voltage
IDR =9.3A, VGS = 0 V
TK9P65W
MIN TYP MAX UNIT
650
V
2.5
3.5
V
0.56
Ω
±1 μA
10
μA
1.7
V
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