TK290P65Y

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK290P65Y ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.29Ω ·Enhancement mode: Vth = 3 to 4V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 11.5 A IDM Drain Current-Single Pulsed 46 A PD Total Dissipation @TC=25℃ 100 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1.25 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK290P65Y ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=0.45mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=5.8A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V VSDF Diode forward voltage IDR =11.5A, VGS = 0 V MIN TYP MAX UNIT 650 V 3 4 V 290 mΩ ±1 μA 10 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any t...