TK28N65W

isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK28N65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.13Ω. ·Enhancement mode: Vth =3 to 4.5 V (VDS = 10 V, ID=1.6mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 27.6 A IDM Drain Current-Single Pulsed 110 A PD Total Dissipation @TC=25℃ 230 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.543 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK28N65W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1.6mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=13.8A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSDF Diode forward voltage IDR =27.6A, VGS = 0 V MIN TYP MAX UNIT 650 V 3 4.5 V 130 mΩ ±1 μA 100 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any...