TK17N65W

isc N-Channel MOSFET Transistor TK17N65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.2Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 17.3 A IDM Drain Current-Single Pulsed 69.2 A PD Total Dissipation @TC=25℃ 165 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 0.757 ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=0.9mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=8.7A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSDF Diode forward voltage IDR =17.3A, VGS = 0 V TK17N65W MIN TYP MAX UNIT 650 V 2.5 3.5 V 0.2 Ω ±1 μA 10 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con...