TK17J65U

iscN-Channel MOSFET Transistor ·FEATURES ·Low drain-source on-resistance: RDS(on) = 0.26Ω(MAX) ·Low leakage current: IDSS = 100 µA (max) (VDS = 650 V) ·Enhancement mode: Vth = 3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 13.7 A IDM Drain Current-Single Pulsed 34 A PD Total Dissipation @TC=25℃ 45 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX UNIT 2.78 ℃/W TK17J65U isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark iscN-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= 10mA VGS(th) Gate Threshold Voltage VDS= 10V; ID=1mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID=8.5A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS= 650V; VGS= 0V VSDF Diode forward voltage IDR =17A, VGS = 0 V TK17J65U MIN TYP MAX UNIT 650 V 3.0 5.0 V 260 mΩ ±1 μA 100 μA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datash...