TK13J65U

isc N-Channel MOSFET Transistor TK13J65U ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤38mΩ. ·Enhancement mode: Vth =3.0 to 5.0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pulsed 26 A PD Total Dissipation @TC=25℃ 170 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.735 UNIT ℃/W isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID=10mA VGS(th) Gate Threshold Voltage VDS=10V; ID=1mA RDS(on) Drain-Source On-Resistance VGS=10V; ID=6.5A IGSS Gate-Source Leakage Current VGS= ±30V;VDS= 0V IDSS Drain-Source Leakage Current VDS=650V; VGS= 0V VSDF Diode forward voltage IDR =13A, VGS = 0 V TK13J65U MIN TYP MAX UNIT 650 V 3 5 V 38 mΩ ±1 μA 100 uA 1.7 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herei...