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TK11P65W Dataheets PDF



Part Number TK11P65W
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet TK11P65W DatasheetTK11P65W Datasheet (PDF)

isc N-Channel MOSFET Transistor TK11P65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.44Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage ±30 V ID Drain Current-Continuous 11.1 A IDM Drain .

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