Document
iscN-Channel MOSFET Transistor
TK5P60W
·FEATURES ·Low drain-source on-resistance:
RDS(ON) = 0.77Ω (typ.) ·Easy to control Gate switching ·Enhancement mode:
Vth = 2.7 to 3.7V (VDS = 10 V, ID=0.27mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
5.4
A
IDM
Drain Current-Single Pulsed
21.6
A
PD
Total Dissipation @TC=25℃
30
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 4.17
UNIT ℃/W
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iscN-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.27mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=2.7A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS= 600V; VGS= 0V
VSDF
Diode forward voltage
IDR =5.4A, VGS = 0 V
TK5P60W
MIN TYP MAX UNIT
600
V
2.7
3.7
V
770 900 mΩ
±1 μA
10
μA
1.7
V
NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
isc website:www.iscsemi.cn
2 isc & iscsemi is registered trademark
.