isc N-Channel MOSFET Transistor
TK39N60X
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.065Ω. ·Enhancement mode...
isc N-Channel MOSFET
Transistor
TK39N60X
·FEATURES ·Low drain-source on-resistance:
RDS(on) ≤0.065Ω. ·Enhancement mode:
Vth =2.7 to 3.7V (VDS = 10 V, ID=1.9mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage
Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
600
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-Continuous
38.8
A
IDM
Drain Current-Single Pulsed
155
A
PD
Total Dissipation @TC=25℃
270
W
Tj
Max. Operating Junction Temperature 150
℃
Tstg
Storage Temperature
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX UNIT 0.463 ℃/W
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID=10mA
VGS(th)
Gate Threshold Voltage
VDS=10V; ID=1.9mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=12.5A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS=600V; VGS= 0V
VSDF
Diode forward voltage
IDR =38.8A, VGS = 0 V
TK39N60X
MIN TYP MAX UNIT
600
V
2.5
3.5
V
65
mΩ
±1 μA
100
uA
1.7
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information co...
